Nitride semiconductors shine at record Fall MRS

Nanosphere Lithography for Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Ortiz Research Group Fall 2008 MRS Abstracts

TITLE: Functionally-graded sandwich design of the armor protecting a hot-vent gastropod AUTHORS (FIRST NAME, LAST NAME): Haimin Yao1, Ming Dao1, Timothy Imholt2, Subra Suresh1, Christine Ortiz1 INSTITUTIONS (ALL): 1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambirdge, MA, USA. 2. Raytheon, Inc, Marlboro, MA, USA. ABSTRACT BODY: Recently, a gastropo...

Program—Symposium PP | 2015 MRS Fall Meeting | Boston

8:00 PM PP9.02 Thermodynamic and Kinetic Consideration on the Conversion-Type Lithium Storage in Vanadium Oxides Jeong Beom Lee1, Janghyuk Moon2, Jae Gil Lee1, Hong Seo Hwang1, Oh B Chae1, Ji Heon Ryu3, Maenghyo Cho2, Kyeongjae Cho2 4, Seung M. Oh1. 1, Department of Chemical and Biological Engineering, Seoul National University, Seoul, Korea (the Republic of); 2, WCU Multiscale Mechanical Desig...

Polarization induced electron populations in III - V nitride semiconductors

Polarization induced electron populations in III-V nitride semiconductors Transport, growth, and device applications by Debdeep Jena The III-V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering ...